Comparing Switching Topologies for Solar Inverter Designs
March 26, 2024 by Infineon Technologies- SiC MOSFETs replace IGBTs and Si SJ MOSFETs
- Changing to multilevel circuit topologies
- 4 kW MV MOSFET multilevel solar inverter with no fan or heatsink
White Paper Overview
This article from Infineon Technologies delves into the realm of solar inverter design, aiming to elevate efficiency and power density through the utilization of cutting-edge technologies. The focal point is the comparative analysis of traditional insulated gate bipolar transistors (IGBT) and silicon super-junction (SJ) MOSFETs, juxtaposed with the introduction of two emerging methodologies making waves in the industry. The text elucidates the potential of wide bandgap devices such as silicon carbide (SiC) MOSFETs and the implementation of a multilevel topology employing lower voltage silicon MOSFETs, both capable of achieving an impressive 99% efficiency. By providing comprehensive insights into each approach, this article equips readers with the knowledge to make informed decisions for their solar inverter design endeavors.
